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Hangzhou Autumn Qi Teknolojia Co, Ltd
Nyumbani>Product>InGaAs indium gallium arsenic detector
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    ya China. Chumba 2404, Wanjin International Building, nambari 100, Jinxing Road, Xinjiang, Jianggan District, Hangzhou, Mkoa wa Zhejiang
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InGaAs indium gallium arsenic detector
InGaAs indium gallium arsenic detector
InGaAs indium gallium arsenic detector
InGaAs indium gallium arsenic detector

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Tafsiri za uzalishaji
InGaAs indium gallium arsenic detector

Sifa:

• Usahihi wa juu1700nm

● Low giza sasa

• Kufikia eneo la shughuli0.7 hadi 7mm²


Mfano

eneo ufanisi

Jibu la spectrum (A / W)

sasa giza (nA) @ 5V

Capacity (pF) @ 5V

Bandwidth (nm)

Chip ya

mfuko

Ukubwa (mm)

Maeneo (mm²)

@650 nm / @1550 nm

PC0.7-i

LCC6.1

1

0.7

0.05 / 0.95

2

70

900…1700

PC0.7-ix

LCC6.1

1

0.7

0.3 / 0.95

2

70

600…1700

PC0.7-ix

TO52S1

1

0.7

0.3 / 0.95

2

70

600…1700

PC7.1-i

TO5i

3

0.7

0.05 / 0.95

25

700

900…1700


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